OSCILLATIONS UP TO 712 GHZ IN INAS/ALSB RESONANT-TUNNELING DIODES

被引：668

作者：

BROWN, ER ^{[1
]}

SODERSTROM, JR ^{[1
]}

PARKER, CD ^{[1
]}

MAHONEY, LJ ^{[1
]}

MOLVAR, KM ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] CALTECH,TJ WATSON LAB,PASADENA,CA 91125

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 20期

关键词：

D O I：

10.1063/1.104902

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oscillations have been obtained at frequencies from 100 to 712 GHz in InAs/AlSb double-barrier resonant-tunneling diodes at room temperature. The measured power density at 360 GHz was 90 W cm-2, which is 50 times that generated by GaAs/AlAs diodes at essentially the same frequency. The oscillation at 712 GHz represents the highest frequency reported to date from a solid-state electronic oscillator at room temperature.

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收藏

页码：2291 / 2293

页数：3

相关论文

共 9 条

[1] HIGH-FIELD TRANSPORT IN GAAS, INP AND INAS [J].

BRENNAN, K ;

HESS, K .

SOLID-STATE ELECTRONICS, 1984, 27 (04) :347-357

[2]

BROWN EJ, UNPUB

[3] FUNDAMENTAL OSCILLATIONS UP TO 200 GHZ IN RESONANT TUNNELING DIODES AND NEW ESTIMATES OF THEIR MAXIMUM OSCILLATION FREQUENCY FROM STATIONARY-STATE TUNNELING THEORY [J].

BROWN, ER ;

GOODHUE, WD ;

SOLLNER, TCLG .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) :1519-1529

[4] OSCILLATIONS UP TO 420 GHZ IN GAAS/ALAS RESONANT TUNNELING DIODES [J].

BROWN, ER ;

SOLLNER, TCLG ;

PARKER, CD ;

GOODHUE, WD ;

CHEN, CL .

APPLIED PHYSICS LETTERS, 1989, 55 (17) :1777-1779

[5] RESONANT TUNNELING DIODES FOR SWITCHING APPLICATIONS [J].

DIAMOND, SK ;

OZBAY, E ;

RODWELL, MJW ;

BLOOM, DM ;

PAO, YC ;

HARRIS, JS .

APPLIED PHYSICS LETTERS, 1989, 54 (02) :153-155

[6]

DIAMOND SK, 1989, OSA P PICOSECOND ELE, V4, P101

[7] SIMULATION OF EXTRINSIC BISTABILITY OF RESONANT TUNNELING STRUCTURES [J].

LIU, HC .

APPLIED PHYSICS LETTERS, 1988, 53 (06) :485-486

[8]

SODERSTROM JR, 1991, APPL PHYS LETT, V58, P275, DOI 10.1063/1.104659

[9] PICOSECOND SWITCHING TIME MEASUREMENT OF A RESONANT TUNNELING DIODE [J].

WHITAKER, JF ;

MOUROU, GA ;

SOLLNER, TCLG ;

GOODHUE, WD .

APPLIED PHYSICS LETTERS, 1988, 53 (05) :385-387