INVESTIGATION OF IN0.53GA0.47AS/ALAS RESONANT TUNNELING DIODES FOR HIGH-SPEED SWITCHING

被引：36

作者：

CHOW, DH ^{[1
]}

SCHULMAN, JN ^{[1
]}

OZBAY, E ^{[1
]}

BLOOM, DM ^{[1
]}

机构：

[1] STANFORD UNIV,EDWARD L GINZTON LAB,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 14期

关键词：

D O I：

10.1063/1.108451

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report an investigation of In0.53Ga0.47As/AlAs resonant tunneling diodes designed for high speed switching applications. Experimental peak current densities are observed to increase with decreasing AlAs barrier thicknesses, in good agreement with a two band tunneling calculation, which includes the effects of strain and band bending. Swing voltages over the range 0.5-1.0 V are demonstrated to be controllable via the thickness of a lightly doped depletion layer. Estimated RC time constants are compared with intrinsic tunneling times for the samples studied. A sample with 6 monolayer AlAs barriers yields devices with peak current densities of 3.1 X 10(5) A/CM2 and peak-to-valley current ratios of 6: 1. The minimum rise time in this sample is calculated to be limited by RC switching delays to 1.6 ps.

引用

页码：1685 / 1687

页数：3

共 15 条

[1] PSEUDOMORPHIC IN0.53GA0.47AS/ALAS/INAS RESONANT TUNNELING DIODES WITH PEAK-TO-VALLEY CURRENT RATIOS OF 30 AT ROOM-TEMPERATURE [J].