MONOLITHIC SAMPLING HEAD IC

被引：14

作者：

MIURA, A ^{[1
]}

YAKIHARA, T ^{[1
]}

UCHIDA, S ^{[1
]}

OKA, S ^{[1
]}

KOBAYASHI, S ^{[1
]}

KAMADA, H ^{[1
]}

DOBASHI, M ^{[1
]}

机构：

[1] YOKOGAWA ELECT CORP,DEPT ENGN,DIV ELECTRON DEVICE,MUSASHINO,TOKYO 180,JAPAN

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1990年 / 38卷 / 12期

关键词：

D O I：

10.1109/22.64583

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithic sampling head IC composed of a resonant tunneling diode (RTD) for the sampling pulse generator and Schottky barrier diodes for the sampling bridge has been developed. The RTD was made using an In0.53Ga0.47As/AlAs structure (pseudomorphic strained superlattice) and used as a sampling pulse generator. For this type of high switching voltage RTD, a peak to valley ratio (P/V ratio) of 9 at 202-degrees-C and peak to peak switching voltages of 1.5 V or more at room temperature were achieved. The Schottky barrier diodes were made from an (In0.53Ga0.47As)0.5(In0.52Al0.48As)0.5 compound. A frequency bandwidth of at least 26 GHz was obtained. When attempting to use a quantum effect device such as an RTD in a practical application, the most important factor to consider is its reliability. We achieved good results in an endurance test of this device, in which it was made to continuously oscillate between 600 MHz and 1 GHz at 90-degrees-C for more than 1000 h.

引用

页码：1980 / 1985

页数：6

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