PICOSECOND CHARACTERIZATION OF INGAAS/INALAS RESONANT TUNNELING BARRIER DIODE BY ELECTRO-OPTIC SAMPLING

被引：12

作者：

TACKEUCHI, A

INATA, T

MUTO, S

MIYAUCHI, E

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 05期

关键词：

D O I：

10.1143/JJAP.28.L750

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L750 / L753

页数：4

共 14 条

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[8] CURRENT-VOLTAGE CHARACTERISTICS OF IN0.53GA0.47AS/IN0.52AL0.48AS RESONANT TUNNELING BARRIER STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[9] CONDUCTION-BAND EDGE DISCONTINUITY OF IN0.52GA0.48AS/IN0.52(GA1-XALX)0.48AS (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-1) HETEROSTRUCTURES [J].

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