CURRENT-VOLTAGE CHARACTERISTICS OF IN0.53GA0.47AS/IN0.52AL0.48AS RESONANT TUNNELING BARRIER STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：21

作者：

SUGIYAMA, Y

INATA, T

MUTO, S

NAKATA, Y

HIYAMIZU, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 04期

关键词：

D O I：

10.1063/1.99504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：314 / 316

页数：3

共 15 条

[1] ENERGY-BAND ALIGNMENT IN GAAS - (AL,GA)AS HETEROSTRUCTURES - THE DEPENDENCE ON ALLOY COMPOSITION [J].

BATEY, J ;

WRIGHT, SL .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) :200-209

[2] OBSERVATION OF RESONANT TUNNELING THROUGH GAAS QUANTUM-WELL STATES CONFINED BY AIA X-POINT BARRIERS [J].

BONNEFOI, AR ;

MCGILL, TC ;

BURNHAM, RD ;

ANDERSON, GB .

APPLIED PHYSICS LETTERS, 1987, 50 (06) :344-346

[3] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS [J].

CHANG, LL ;

ESAKI, L ;

TSU, R .

APPLIED PHYSICS LETTERS, 1974, 24 (12) :593-595

[4] LARGE ROOM-TEMPERATURE EFFECTS FROM RESONANT TUNNELING THROUGH ALAS BARRIERS [J].

GOODHUE, WD ;

SOLLNER, TCLG ;

LE, HQ ;

BROWN, ER ;

VOJAK, BA .

APPLIED PHYSICS LETTERS, 1986, 49 (17) :1086-1088

[5] EXCELLENT NEGATIVE DIFFERENTIAL RESISTANCE OF INALAS-INGAAS RESONANT TUNNELING BARRIER STRUCTURES GROWN BY MBE [J].

INATA, T ;

MUTO, S ;

NAKATA, Y ;

FUJII, T ;

OHNISHI, H ;

HIYAMIZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (12) :L983-L985

[6] RESONANT TUNNELING VIA X-POINT STATES IN ALAS-GAAS-ALAS HETEROSTRUCTURES [J].

MENDEZ, EE ;

WANG, WI ;

CALLEJA, E ;

DASILVA, CETG .

APPLIED PHYSICS LETTERS, 1987, 50 (18) :1263-1265

[7] QUANTUM-WELL WIDTH DEPENDENCE OF NEGATIVE DIFFERENTIAL RESISTANCE OF IN0.52AL0.48AS/IN0.53GA0.47AS RESONANT TUNNELING BARRIERS GROWN BY MBE [J].

MUTO, S ;

INATA, T ;

SUGIYAMA, Y ;

NAKATA, Y ;

FUJII, T ;

OHNISHI, H ;

HIYAMIZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (03) :L220-L222

[8] EFFECT OF SILICON DOPING PROFILE ON IV CHARACTERISTICS OF AN ALGAAS/GAAS RESONANT TUNNELING BARRIER STRUCTURE GROWN BY MBE [J].

MUTO, S ;

INATA, T ;

OHNISHI, H ;

YOKOYAMA, N ;

HIYAMIZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (07) :L577-L579

[9] RESONANT TUNNELING OSCILLATIONS IN A GAAS-ALXGA1-XAS HETEROSTRUCTURE AT ROOM-TEMPERATURE [J].

SHEWCHUK, TJ ;

CHAPIN, PC ;

COLEMAN, PD ;

KOPP, W ;

FISCHER, R ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1985, 46 (05) :508-510

[10] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J].

SOLLNER, TCLG ;

GOODHUE, WD ;

TANNENWALD, PE ;

PARKER, CD ;

PECK, DD .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :588-590

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