NEGATIVE DIFFERENTIAL RESISTANCE OF IN0.53GA0.47AS/IN0.52AL0.48AS RESONANT TUNNELING BARRIERS GROWN BY MBE

被引：2

作者：

MUTO, S

INATA, T

SUGIYAMA, Y

NAKATA, Y

FUJII, T

HIYAMIZU, S

机构：

来源：

JOURNAL DE PHYSIQUE | 1987年 / 48卷 / C-5期

关键词：

D O I：

10.1051/jphyscol:1987595

中图分类号：

学科分类号：

摘要：

引用

页码：453 / 456

页数：4

共 15 条

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[8] QUANTUM-WELL WIDTH DEPENDENCE OF NEGATIVE DIFFERENTIAL RESISTANCE OF IN0.52AL0.48AS/IN0.53GA0.47AS RESONANT TUNNELING BARRIERS GROWN BY MBE [J].

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