HIGHLY STRAINED GAAS/INGAAS/ALAS RESONANT TUNNELING DIODES WITH SIMULTANEOUSLY HIGH PEAK CURRENT DENSITIES AND PEAK-TO-VALLEY RATIOS AT ROOM-TEMPERATURE

被引：18

作者：

KAPRE, RM ^{[1
]}

MADHUKAR, A ^{[1
]}

GUHA, S ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI & ENGN,LOS ANGELES,CA 90089

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 20期

关键词：

D O I：

10.1063/1.104943

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly strained In0.33Ga0.67As/AlAs-based resonant tunneling diodes have been fabricated on GaAs(100)substrates without the use of thick strain relieving buffer layers. These structures exhibit a simultaneously high peak current density (J(p)) of 125 kA/cm2 and a peak to valley ratio (PVR) of 4.7 A PVR of 5.9 with J(p) = 73 kA/cm2 is observed on some devices, the highest PVR seen for such devices. The excellent resonant tunneling characteristics of these devices are attributed to accurate device design using a GAMMA-X-GAMMA-X-GAMMA resonant tunneling path and to high quality interfaces obtained through the use of optimized growth conditions.

引用

页码：2255 / 2257

页数：3

共 12 条

[1] OBSERVATION OF RESONANT TUNNELING THROUGH GAAS QUANTUM-WELL STATES CONFINED BY AIA X-POINT BARRIERS [J].

BONNEFOI, AR ;

MCGILL, TC ;

BURNHAM, RD ;

ANDERSON, GB .

APPLIED PHYSICS LETTERS, 1987, 50 (06) :344-346

[2]

Broekaert T. P. E., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P559, DOI 10.1109/IEDM.1989.74344

[3] PSEUDOMORPHIC IN0.53GA0.47AS/ALAS/INAS RESONANT TUNNELING DIODES WITH PEAK-TO-VALLEY CURRENT RATIOS OF 30 AT ROOM-TEMPERATURE [J].

BROEKAERT, TPE ;

LEE, W ;

FONSTAD, CG .

APPLIED PHYSICS LETTERS, 1988, 53 (16) :1545-1547

[4] FUNDAMENTAL OSCILLATIONS UP TO 200 GHZ IN RESONANT TUNNELING DIODES AND NEW ESTIMATES OF THEIR MAXIMUM OSCILLATION FREQUENCY FROM STATIONARY-STATE TUNNELING THEORY [J].

BROWN, ER ;

GOODHUE, WD ;

SOLLNER, TCLG .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (03) :1519-1529

[5] IMPROVED DESIGN OF ALAS/GAAS RESONANT TUNNELING DIODES [J].

CHENG, P ;

HARRIS, JS .

APPLIED PHYSICS LETTERS, 1990, 56 (17) :1676-1678

[6]

DIAMOND SK, 1989, OSA P PICOSECOND ELE, V4, P101

[7] IN0.25GA0.75AS/ALAS-BASED RESONANT TUNNELING DIODES GROWN ON PREPATTERNED AND NON-PATTERNED GAAS (100) SUBSTRATES [J].

KAPRE, R ;

MADHUKAR, A ;

GUHA, S .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (06) :270-272

[8] REALIZATION AND ANALYSIS OF GAAS/ALAS/IN0.1GA0.9AS BASED RESONANT TUNNELING DIODES WITH HIGH PEAK-TO-VALLEY RATIOS AT ROOM-TEMPERATURE [J].

KAPRE, R ;

MADHUKAR, A ;

KAVIANI, K ;

GUHA, S ;

RAJKUMAR, KC .

APPLIED PHYSICS LETTERS, 1990, 56 (10) :922-924

[9] TUNNELING THROUGH ALAS BARRIERS - GAMMA-X TRANSFER CURRENT [J].

LANDHEER, D ;

LIU, HC ;

BUCHANAN, M ;

STONER, R .

APPLIED PHYSICS LETTERS, 1989, 54 (18) :1784-1786

[10]

Sen S., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P834, DOI 10.1109/IEDM.1988.32940

← 1 2 →