IN0.25GA0.75AS/ALAS-BASED RESONANT TUNNELING DIODES GROWN ON PREPATTERNED AND NON-PATTERNED GAAS (100) SUBSTRATES

被引：2

作者：

KAPRE, R ^{[1
]}

MADHUKAR, A ^{[1
]}

GUHA, S ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI & ENGN,PHOTON MAT LAB,LOS ANGELES,CA 90089

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 06期

关键词：

D O I：

10.1109/55.55277

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the dc current-voltage characteristics of strained Ino.25Gao.75As/AlAs resonant tunneling diode (RTD) structures grown on GaAs (100) substrates which, for the first time, also include prepatterned mesas. The observed peak-to-valley current ratios (PVR’s) of 4.5 at 300 K and 15 at 77 K with corresponding peak current densities of 11 and 13 kA/cm2 are the highest values of PVR to date for this strained system and are the same for the nonpatterned and prepatterned regions. © 1990 IEEE

引用

页码：270 / 272

页数：3

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