Hot electron relaxation time in GaN

被引：98

作者：

Ye, H ^{[1
]}

Wicks, GW

Fauchet, PM

机构：

[1] Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA

[2] Univ Rochester, Inst Opt, Rochester, NY 14627 USA

[3] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 05期

关键词：

D O I：

10.1063/1.122995

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hot electron relaxation time is studied in an n-type GaN film grown by molecular beam epitaxy on sapphire. A femtosecond pump-probe technique is used in which the electrons are excited by an infrared pump and the carrier dynamics are monitored by a tunable near ultraviolet probe. Complex transients, showing bleaching or induced absorption, are observed. The data are fitted by a model in which the longitudinal optical (LO)-phonon emission is the dominant energy relaxation process. The LO-phonon emission time is measured to be 0.2 ps. (C) 1999 American Institute of Physics. [S0003-6951(99)01005-0].

引用

页码：711 / 713

页数：3

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