Preparation of highly pure quaterthiophene and role of impurities on its photoluminescence properties

被引:41
作者
Trabattoni, S
Laera, S
Mena, R
Papagni, A
Sassella, A
机构
[1] Univ Milano Bicocca, INFM, I-20125 Milan, Italy
[2] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy
[3] Nikem Res SRL, I-20021 Baranzate Di Bollate, Mi, Italy
关键词
D O I
10.1039/b309150c
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Highly pure quaterthiophene (4T) has been prepared from monobromobithiophene by a Ni-0-mediated coupling reaction. The analysis of impurities produced by the synthetic procedure, performed by mass spectrometry and gas chromatography with a mass spectrometer detector, has allowed the identification of at least four contaminants, among them, alpha-bromoquaterthiophene (Br-4T). Studies of photoluminescence carried out at low temperatures ( from 70 to 4 K) on 4T thin films grown by organic molecular beam deposition are demonstrated to be a powerful tool in detecting impurities that can act as traps for 4T emission. Indeed, it was possible to assign the anomalous emission observed in some 4T thin films to Br-4T. A protocol for removal of 4T contaminants is also proposed.
引用
收藏
页码:171 / 178
页数:8
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