Experimental evaluation of device degradation subject to oxide soft breakdown

被引：3

作者：

Zhang, J

Yuan, JS ^{[1
]}

Ma, Y

Chen, Y

Oates, AS

机构：

[1] Univ Cent Florida, Sch Elect Engn & Comp Sci, Chip Design & Reliabil Lab, Orlando, FL 32816 USA

[2] Agere Syst, Orlando, FL 32819 USA

来源：

SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 09期

关键词：

soft breakdown; hard breakdown; stress-induced leakage currents; direct current measurement technique; hot carrier stress;

D O I：

10.1016/S0038-1101(01)00252-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Deep submicron MOS transistors subject to oxide soft breakdown (SBD) are evaluated. The experimental results demonstrate that the threshold voltage and mobility degrade after SBD as evidenced by shifts of oxide trap charges and interface states. Hot electron injection triggers more SBD occurrences as shown in the gate and substrate currents after stress. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：1521 / 1524

页数：4

共 17 条

[1]

ALAN MA, 1999, IEEE IEDM 18 APR

[2]

ALAN MA, 2000, 38 IEEE IRPS, P21

[3] ON THE HOT-CARRIER-INDUCED POSTSTRESS INTERFACE-TRAP GENERATION IN N-CHANNEL MOS-TRANSISTORS [J].