Metallic resistively coupled single-electron transistor

We have fabricated and measured transport properties of resistively coupled single-electron transistors (R-SETs). In our version, a chromium thin-film resistive strip served as a gate and was connected directly to a mesoscopic island formed between two ultrasmall Al/AlO(x)/Al tunnel junctions. In current-voltage-gate voltage dependences of the R-SETs, a characteristic Coulomb blockade pattern was observed. Our simulations based on the orthodox theory of single-electron tunneling are in good qualitative agreement with the experimental data and indicate excessive electron temperature of the devices. (C) 1999 American Institute of Physics. [S0003-6951(99)00701-9].