Point defect characterization of Zn- and Cd-based semiconductors using positron lifetime spectroscopy

被引：18

作者：

Tessaro, G ^{[1
]}

Mascher, P ^{[1
]}

机构：

[1] McMaster Univ, Dept Engn Phys, Ctr Electrophoton Mat & Devices, Hamilton, ON L8S 4L7, Canada

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 197卷 / 03期

基金：

加拿大自然科学与工程研究理事会;

关键词：

II-VI compounds; point defects; positron annihilation spectroscopy;

D O I：

10.1016/S0022-0248(98)00960-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A study of point defects in II-Vt compound semiconductors was undertaken and has revealed that open volume defects are present in a wide variety of these samples. Zn-based binary compounds contain primarily neutral divacancy defects in concentrations in the mid-10(16) cm(-3). CdTe samples contain neutral monovacancy sized defect complexes in the high-10(16) cm(-3) range. When a small fraction of Zn or Se is alloyed into CdTe, the defect profile changes dramatically to one dominated by divacancy sized defects at roughly half the original concentration. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：581 / 585

页数：5

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