Growth per cycle in atomic layer deposition: Real application examples of a theoretical model

In a previous paper, a theoretical model was derived to describe the growth per cycle in atomic layer deposition (ALD) as a function of the chemistry of the growth when compounds are used as reactants. Ibis paper presents examples of how the model can be applied to investigate the mechanisms of real ALD processes. Three processes that represent different classes of compound reactants were selected for study: the trimethylaluminum/water process to grow aluminum oxide, the yttrium 2,2,6,6-tetramethyl-3,5-heptanedionate (thd)/ozone process to grow yttrium oxide, and the titanium tetrachloride/water process to grow titanium dioxide. The results obtained by applying the model were, in general, consistent with the results obtained through separate investigations of the reaction mechanisms. The model was shown to be a useful tool in investigations of the reaction chemistry of real ALD processes.