Effect of growth conditions on formation of TiO2-II thin films in atomic layer deposition process

被引：54

作者：

Aarik, J ^{[1
]}

Aidla, A ^{[1
]}

Sammelselg, V ^{[1
]}

Uustare, T ^{[1
]}

机构：

[1] ESTONIAN ACAD SCI,INST PHYS,EE-2400 TARTU,ESTONIA

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 181卷 / 03期

关键词：

D O I：

10.1016/S0022-0248(97)00279-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The role of precursor doses and purge times on the atomic layer deposition (ALD) of high-density alpha-PbO2-type TiO2 polymorph (TiO2-II) is studied. It has been shown that the conditions closest to ideal ALD result in the most favourable growth of TiO2-II films from TiCl4, and H2O. Complete coverage of solid surface with chloride during TiCl4 pulse, is a crucial precondition for obtaining TiO2-II structure. The maximum thickness of pure TiO2-II films is limited and depends on the growth conditions. The gas-phase reactions and the surface reactions via OH-groups which reduce the Cl/Ti ratio in the surface intermediate layer formed during TiCl4, pulse, cause a decrease in this value.

引用

页码：259 / 264

页数：6

共 9 条

[1] Atomic-layer growth of TiO2-II thin films [J].