Atomic-layer growth of TiO2-II thin films

被引：29

作者：

Aarik, J

Aidla, A

Uustare, T

机构：

[1] Institute of Experimental Physics and Technology, University of Tartu, Tartu, EE2400

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1996年 / 73卷 / 03期

关键词：

D O I：

10.1080/095008396180911

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of the high-pressure polymorph of titania, TIO2-II, were grown by atomic-layer deposition (ALD) using TiCI4 and H2O as precursors. Pure TiO2-II was synthesized at substrate temperatures ranging from 375 to 550 degrees C while the films grown at 350 and 600 degrees C contained mixed anatase-TiO2-II and rutile-TiO2-II phases respectively. Transformation of ALD-grown TIO2-II into rutile occurred on post-growth annealing at temperatures as high as 700 degrees C.

引用

页码：115 / 119

页数：5

共 17 条

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