Dual Threshold Voltage Organic Thin-Film Transistor Technology

被引：34

作者：

Nausieda, Ivan ^{[1
]}

Ryu, Kevin Kyungbum ^{[1
]}

Da He, David ^{[1
]}

Akinwande, Akintunde Ibitayo ^{[1
]}

Bulovic, Vladimir ^{[1
]}

Sodini, Charles G. ^{[1
]}

机构：

[1] MIT, Microsyst Technol Lab, Cambridge, MA 02139 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 11期

关键词：

Digital integrated circuits; inverters; organic compounds; thin-film transistors (TFTs); WORK FUNCTION; NOISE MARGIN; MOBILITY; POLYMER; POWER; GATE;

D O I：

10.1109/TED.2010.2072550

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully photolithographic dual threshold voltage (V-T) organic thin-film transistor (OTFT) process suitable for flexible large-area integrated circuits is presented. The near-room-temperature (<= 95 degrees C) process produces integrated dual V-T pentacene-based p-channel transistors. The two V-T's are enabled by using two gate metals of low (aluminum) and high (platinum) work function. The Al and Pt gate OTFTs exhibit nominally identical current-voltage transfer curves shifted by an amount Delta V-T. The availability of a high-V-T device enables area-efficient zero-V-GS high-output-resistance current sources, enabling high-gain inverters. We present positive noise margin inverters and rail-to-rail ring oscillators powered by a 3-V supply-one of the lowest supply voltages reported for OTFT circuits. These results show that integrating n- and p-channel organic devices is not mandatory to achieve functional area-efficient low-power organic integrated circuits.

引用

页码：3027 / 3032

页数：6

共 20 条

[1] A 13.56-MHz RFID system based on organic transponders [J].