Spin decoherence and relaxation processes in zero-dimensional semiconductor nanostructures

被引：22

作者：

Chamarro, M.

Bernardot, F.

Testelin, C.

机构：

[1] Univ Paris 06, Inat NanoSci Paris, F-75015 Paris, France

[2] Univ Paris 07, CNRS, UMR 7588, F-75015 Paris, France

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2007年 / 19卷 / 44期

关键词：

D O I：

10.1088/0953-8984/19/44/445007

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In recent years, interest in spin physics has been renewed due to its potential application in spintronics and quantum information. In these frameworks, the main required property is the presence of long spin memory. We present a short review of recent results concerning spin decoherence and relaxation processes in zero-dimensional (0D) nanostructures, especially in quantum dots.

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页数：18

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