Spin dynamics of neutral and charged excitons in InAs/GaAs quantum dots:: towards Q-bit implementation?

被引：10

作者：

Amand, T

Marie, X

Sénès, M

Krebs, O

Laurent, S

Cortez, S

Voisin, P

Gérard, JM

机构：

[1] CNRS, UMR 5830, INSA, Phys Mat Condensee Lab, F-31077 Toulouse 4, France

[2] Lab Photon & Nanostruct, F-91460 Marcoussis, France

[3] CEA, CENG, DRFMC, F-38000 Grenoble, France

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2002年 / 32卷 / 4-6期

关键词：

quantum dots; coherent spin states; ultra-fast optical spectroscopy; III-V semiconductors;

D O I：

10.1016/S0749-6036(03)00015-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied the spin dynamics in nonintentionally doped and n-modulation doped self-organized InAs/GaAs quantum dots (QD) by time-resolved photoluminescence. Under strictly resonant excitation, we demonstrate that the carrier spins in these nanostructures are totally frozen on the neutral or charged exciton lifetime scale. In addition, we show that the spin state of the resident electron in n-doped self-assembled InAs-GaAs QD can be written and read using nonresonant, circularly polarized optical pumping. A simple theoretical model is presented and accounts for the remarkable dynamics producing counter-polarized photoluminescence in such structures. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：157 / 170

页数：14

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