Optical orientation and alignment of excitons in quantum dots

被引:46
作者
Dzhioev, RI [1 ]
Zakharchenya, BP [1 ]
Ivchenko, EL [1 ]
Korenev, VL [1 ]
Kusraev, YG [1 ]
Ledentsov, NN [1 ]
Ustinov, VM [1 ]
Zhukov, AE [1 ]
Tsatsul'nikov, AF [1 ]
机构
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
关键词
D O I
10.1134/1.1130397
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Optical orientation and alignment of excitons in InAlAs quantum dots in the AlGaAs matrix have been studied both theoretically and experimentally. Experiments performed in a longitudinal magnetic field (Faraday geometry) reveal transformation of optical orientation to alignment and alignment to orientation, which is caused by exchange splitting of the dipole-active exciton doublet and allowed by the quantum-dot low symmetry. A comparison of theory with experiment made with inclusion of the anisotropy of exciton generation and recombination along the [1 (1) over bar 1] and [110] axes permits one to determine the character of dipole distribution in direction for resonant optical transitions in the self-organized quantum-dot ensemble studied. (C) 1998 American Institute of Physics.
引用
收藏
页码:790 / 793
页数:4
相关论文
共 11 条
[1]  
ALEINER IL, 1992, JETP LETT+, V55, P692
[2]   Determination of interface preference by observation of linear-to-circular polarization conversion under optical orientation of excitons in type-II GaAs/AlAs superlattices [J].
Dzhioev, RI ;
Gibbs, HM ;
Ivchenko, EL ;
Khitrova, G ;
Korenev, VL ;
Tkachuk, MN ;
Zakharchenya, BP .
PHYSICAL REVIEW B, 1997, 56 (20) :13405-13413
[3]   Fine structure splitting in the optical spectra of single GaAs quantum dots [J].
Gammon, D ;
Snow, ES ;
Shanabrook, BV ;
Katzer, DS ;
Park, D .
PHYSICAL REVIEW LETTERS, 1996, 76 (16) :3005-3008
[4]  
GOUPALOV SV, 1996, P INT S NAN PHYS TEC, P322
[5]   INAS/GAAS PYRAMIDAL QUANTUM DOTS - STRAIN DISTRIBUTION, OPTICAL PHONONS, AND ELECTRONIC-STRUCTURE [J].
GRUNDMANN, M ;
STIER, O ;
BIMBERG, D .
PHYSICAL REVIEW B, 1995, 52 (16) :11969-11981
[6]   Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dots [J].
Heitz, R ;
Grundmann, M ;
Ledentsov, NN ;
Eckey, L ;
Veit, M ;
Bimberg, D ;
Ustinov, VM ;
Egorov, AY ;
Zhukov, AE ;
Kopev, PS ;
Alferov, ZI .
APPLIED PHYSICS LETTERS, 1996, 68 (03) :361-363
[7]   MAGNETIC-FIELD-EFFECTS ON PHOTOLUMINESCENCE POLARIZATION IN TYPE-II GAAS/ALAS SUPERLATTICES [J].
IVCHENKO, EL ;
KOCHERESHKO, VP ;
NAUMOV, AY ;
URALTSEV, IN ;
LAVALLARD, P .
SUPERLATTICES AND MICROSTRUCTURES, 1991, 10 (04) :497-501
[8]   Heavy-light hole mixing at zinc-blende (001) interfaces under normal incidence [J].
Ivchenko, EL ;
Kaminski, AY ;
Rossler, U .
PHYSICAL REVIEW B, 1996, 54 (08) :5852-5859
[9]  
Ledentsov N. N., 1994, P 22 INT C PHYS SEM, V3, P1855
[10]   Photocarrier recombination in AlyIn1-yAs/AlxGa1-x as self-assembled quantum dots [J].
Raymond, S ;
Fafard, S ;
Charbonneau, S ;
Leon, R ;
Leonard, D ;
Petroff, PM ;
Merz, JL .
PHYSICAL REVIEW B, 1995, 52 (24) :17238-17242