Effect of threading defects on InGaN/GaN multiple quantum well light emitting diodes

被引：92

作者：

Ferdous, M. S. ^{[1
]}

Wang, X. ^{[1
]}

Fairchild, M. N. ^{[1
]}

Hersee, S. D. ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 23期

关键词：

D O I：

10.1063/1.2822395

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoelectrochemical etching was used to measure the threading defect (TD) density in InGaN multiple quantum well light-emitting diodes (LEDs) fabricated from commercial quality epitaxial wafers. The TD density was measured in the LED active region and then correlated with the previously measured characteristics of these LEDs. It was found that the reverse leakage current increased exponentially with TD density. The temperature dependence of this dislocation-related leakage current was consistent with a hopping mechanism at low reverse-bias voltage and Poole-Frenkel emission at higher reverse-bias voltage. The peak intensity and spectral width of the LED electroluminescence were found to be only weakly dependent on TD density for the measured TD range of 1x10(7)-2x10(8) cm(-2).

引用

页数：3

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