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Integrally gated carbon nanotube field emission cathodes produced by standard microfabrication techniques

被引：19
作者：
Guillorn, MA
Hale, MD
Merkulov, VI
Simpson, ML
Eres, GY
Cui, H
Puretzky, AA
Geohegan, DB
机构：
[1] Oak Ridge Natl Lab, Mol Scale Engn & Nanoscale Technol Res Grp, Oak Ridge, TN 37831 USA
[2] Oak Ridge Natl Lab, Thin Film & Nanostruct Mat Phys Res Grp, Div Solid State, Oak Ridge, TN 37831 USA
[3] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA
[4] Univ Tennessee, Dept Elect & Comp Engn, Knoxville, TN 37996 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 03期
关键词：
D O I：
10.1116/1.1565343
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The fabrication of carbon nanotube (CNT)-based field-emission devices has recently been an area of intense investigation. Here, we report a simple process for the fabrication of integrally gated CNT field-emission cathodes that uses standard microfabrication techniques. The operation of 3 X 3 field-emitter arrays produced using this process was investigated and found to behave in a manner consistent with the Fowler-Nordheim model of field emission. (C) 2003 American Vacuum Society.
引用
收藏
页码：957 / 959
页数：3
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