Measurement of ultrafast carrier dynamics in epitaxial graphene

被引：670

作者：

Dawlaty, Jahan M. ^{[1
]}

Shivaraman, Shriram ^{[1
]}

Chandrashekhar, Mvs ^{[1
]}

Rana, Farhan ^{[1
]}

Spencer, Michael G. ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 04期

基金：

美国国家科学基金会;

关键词：

Epitaxial layers;

D O I：

10.1063/1.2837539

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using ultrafast optical pump-probe spectroscopy, we have measured carrier relaxation times in epitaxial graphene layers grown on SiC wafers. We find two distinct time scales associated with the relaxation of nonequilibrium photogenerated carriers. An initial fast relaxation transient in the 70-120 fs range is followed by a slower relaxation process in the 0.4-1.7 ps range. The slower relaxation time is found to be inversely proportional to the degree of crystalline disorder in the graphene layers as measured by Raman spectroscopy. We relate the measured fast and slow time constants to carrier-carrier and carrier-phonon intraband and interband scattering processes in graphene. (c) 2008 American Institute of Physics.

引用

页数：3

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