P-type transparent conducting In2O3-Ag2O thin films prepared by rf magnetron sputtering

被引：24

作者：

Minami, T ^{[1
]}

Shimokawa, K ^{[1
]}

Miyata, T ^{[1
]}

机构：

[1] Kanazawa Inst Technol, Elect Device Syst Lab, Nonoichi, Ishikawa 921, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1998年 / 16卷 / 03期

关键词：

D O I：

10.1116/1.581262

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

P-type transparent conducting oxide films consisting of a new multicomponent oxide composed of In2O3 and Ag2O have been prepared by rf magnetron sputtering. After postannealing at a temperature of 500 degrees C in air, In2O3-Ag2O thin films prepared using In2O3-Ag2O targets with Ag2O contents of 40-60 wt % exhibited p-type conduction. A resistivity of 10(-1)-10(-3) Ohm cm and an average transmittance above 20% in the visible range were obtained in the p-type amorphous In2O3-Ag2O films. A resistivity of 8.8x10(-3) Ohm cm, Hall mobility of 17 cm(2)/Vs and hole concentration of 4.2x10(19) cm(-3) were obtained in a film prepared with an Ag2O content of 50 wt %. (C) 1998 American Vacuum Society. [S0734-2101(98)00503-X].

引用

页码：1218 / 1221

页数：4

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