Inversion mobility and gate leakage in high-k/metal gate MOSFETs

被引：49

作者：

Kotlyar, R ^{[1
]}

Giles, MD ^{[1
]}

Matagne, P ^{[1
]}

Obradovic, B ^{[1
]}

Shrifen, L ^{[1
]}

Stettler, M ^{[1
]}

Wang, E ^{[1
]}

机构：

[1] Intel Corp, Technol CAD, Hillsboro, OR 97124 USA

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419167

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, we show with simulation that the use of a metal gate/high-k stack offers improved mobility over polysilicon/high-k gates stacks while maintaining decreased gate leakage compared to conventional SiO2 stacks, thus allowing high-performance transistor scaling to continue.

引用

收藏

页码：391 / 394

页数：4

相关论文

共 11 条

[1] High-κ/metal-gate stack and its MOSFET characteristics [J].

Chau, R ;

Datta, S ;

Doczy, M ;

Doyle, B ;

Kavalieros, J ;

Metz, M .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (06) :408-410

[2] Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures [J].

Fischetti, MV .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) :1232-1250

[3] Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-κ insulator:: The role of remote phonon scattering [J].

Fischetti, MV ;

Neumayer, DA ;

Cartier, EA .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (09) :4587-4608

[4] SURFACE-ROUGHNESS AT THE SI(100)-SIO2 INTERFACE [J].

GOODNICK, SM ;

FERRY, DK ;

WILMSEN, CW ;

LILIENTAL, Z ;

FATHY, D ;

KRIVANEK, OL .

PHYSICAL REVIEW B, 1985, 32 (12) :8171-8186

[5]

Hobbs C., 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407), P9, DOI 10.1109/VLSIT.2003.1221060

[6] THE MONTE-CARLO METHOD FOR THE SOLUTION OF CHARGE TRANSPORT IN SEMICONDUCTORS WITH APPLICATIONS TO COVALENT MATERIALS [J].

JACOBONI, C ;

REGGIANI, L .

REVIEWS OF MODERN PHYSICS, 1983, 55 (03) :645-705

[7]

Lee JC, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P95

[8]

SHIH WK, 1997, UT QUANT 2 0

[9] Airy's functions implementation of the transfer-matrix method for resonant tunneling in variably spaced finite superlattices [J].

Vatannia, S ;

Gildenblat, G .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (06) :1093-1105

[10] ELECTRON-SCATTERING FROM SURFACE EXCITATIONS [J].

WANG, SQ ;

MAHAN, GD .

PHYSICAL REVIEW B, 1972, 6 (12) :4517-4524