Electrically injected spin-polarized vertical-cavity surface-emitting lasers

被引:48
作者
Holub, M [1 ]
Shin, J [1 ]
Chakrabarti, S [1 ]
Bhattacharya, P [1 ]
机构
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2035329
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the design, fabrication, and characterization of an electrically injected, spin-polarized, vertical-cavity surface-emitting laser. We have demonstrated spin injection from the ferromagnetic semiconductor (Ga,Mn)As into In0.2Ga0.8As/GaAs quantum wells, spin transport across a distance of similar to 0.25 mu m for temperatures ranging from 80 to 105 K, and spin detection through optical polarization measurements with coherent light emission. Controlled switching between right- and left-elliptically polarized modes is achieved with a maximum degree of circular polarization of 4.6% measured at 80 K. (c) 2005 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 19 条
[1]   EXCITON FORMATION AND HOLE-SPIN RELAXATION IN INTRINSIC QUANTUM-WELLS [J].
AMAND, T ;
DAREYS, B ;
BAYLAC, B ;
MARIE, X ;
BARRAU, J ;
BROUSSEAU, M ;
DUNSTAN, DJ ;
PLANEL, R .
PHYSICAL REVIEW B, 1994, 50 (16) :11624-11628
[2]   Effect of low-temperature annealing on (Ga,Mn)As trilayer structures [J].
Chiba, D ;
Takamura, K ;
Matsukura, F ;
Ohno, H .
APPLIED PHYSICS LETTERS, 2003, 82 (18) :3020-3022
[3]   GAIN-DEPENDENT POLARIZATION PROPERTIES OF VERTICAL-CAVITY LASERS [J].
CHOQUETTE, KD ;
SCHNEIDER, RP ;
LEAR, KL ;
LEIBENGUTH, RE .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) :661-666
[4]   CONTROL OF VERTICAL-CAVITY LASER POLARIZATION WITH ANISOTROPIC TRANSVERSE CAVITY GEOMETRIES [J].
CHOQUETTE, KD ;
LEIBENGUTH, RE .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (01) :40-42
[5]   Above band gap absorption spectra of the arsenic antisite defect in low temperature grown GaAs and AlGaAs [J].
Dankowski, SU ;
Streb, D ;
Ruff, M ;
Kiesel, P ;
Kneissl, M ;
Knupfer, B ;
Dohler, GH ;
Keil, UD ;
Sorenson, CB ;
Verman, AK .
APPLIED PHYSICS LETTERS, 1996, 68 (01) :37-39
[6]   ANNEALING-INDUCED REFRACTIVE-INDEX AND ABSORPTION CHANGES OF LOW-TEMPERATURE-GROWN GAAS [J].
DANKOWSKI, SU ;
KIESEL, P ;
KNUPFER, B ;
KNEISSL, M ;
DOHLER, GH ;
KEIL, UD ;
DYKAAR, DR ;
KOPF, RF .
APPLIED PHYSICS LETTERS, 1994, 65 (25) :3269-3271
[7]   Ferromagnetic III-V and II-VI semiconductors [J].
Dietl, T ;
Ohno, H .
MRS BULLETIN, 2003, 28 (10) :714-719
[8]   Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers [J].
Ku, KC ;
Potashnik, SJ ;
Wang, RF ;
Chun, SH ;
Schiffer, P ;
Samarth, N ;
Seong, MJ ;
Mascarenhas, A ;
Johnston-Halperin, E ;
Myers, RC ;
Gossard, AC ;
Awschalom, DD .
APPLIED PHYSICS LETTERS, 2003, 82 (14) :2302-2304
[9]   NATIVE POINT-DEFECTS IN LOW-TEMPERATURE-GROWN GAAS [J].
LIU, X ;
PRASAD, A ;
NISHIO, J ;
WEBER, ER ;
LILIENTALWEBER, Z ;
WALUKIEWICZ, W .
APPLIED PHYSICS LETTERS, 1995, 67 (02) :279-281
[10]  
Meier F., 1984, OPTICAL ORIENTATION, DOI North-Holland