Effect of low-temperature annealing on (Ga,Mn)As trilayer structures

被引：209

作者：

Chiba, D ^{[1
]}

Takamura, K ^{[1
]}

Matsukura, F ^{[1
]}

Ohno, H ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 18期

关键词：

D O I：

10.1063/1.1571666

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of low-temperature annealing on (Ga,Mn)As/GaAs/(Ga,Mn)As trilayer structures is studied. Low-temperature annealing significantly increases the ferromagnetic transition temperature T-C of top (Ga,Mn)As layers, reaching as high as 160 K, whereas no apparent effect is observed on bottom (Ga,Mn)As layers. The annealing effect on Be-doped trilayers is also presented. (C) 2003 American Institute of Physics.

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页码：3020 / 3022

页数：3

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