Anisotropy and Barkhausen jumps in diluted magnetic semiconductor (Ga,Mn)As

被引：10

作者：

Hayashi, T

Katsumoto, S

Hashimoto, Y

Endo, A

Kawamura, M

Zalalutdinov, M

Iye, Y

机构：

[1] Univ Tokyo, Inst Solid State Phys, Tokyo 1068666, Japan

[2] Japan Sci & Technol Corp, CREST, Tokyo 1710031, Japan

来源：

PHYSICA B | 2000年 / 284卷

关键词：

anisotropic magnetoresistance; Barkhausen jump; diluted magnetic semiconductors;

D O I：

10.1016/S0921-4526(99)02597-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We measured electronic transport and magnetization of a metallic and ferromagnetic (Ga,Mn)As thin film epitaxially grown on a GaAs [001] substrate. In-plane ((001)) anisotropic magnetoresistance (AMR) was affected by the current direction to the crystalline, which is phenomenologically explained by the anisotropy of the magnetization. The magnetoresistance for perpendicular field showed reproducible irregular oscillations, which are attributed to the Barkhausen effect. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：1175 / 1176

页数：2

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