The effect of various dopants on thermoelectric properties of Bi2(Te0.9Se0.1)3 polycrystals

被引：3

作者：

Nozue, A ^{[1
]}

Park, YH ^{[1
]}

Kawasaki, A ^{[1
]}

机构：

[1] Matsushita Elect Ind Co Ltd, Refrigerat Res Lab, Kusatsu, Shiga 5258555, Japan

来源：

TWENTY-SECOND INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '03 | 2003年

关键词：

D O I：

10.1109/ICT.2003.1287442

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

In this study, mechanical alloying followed by pulse discharge sintering (MA-PDS) was employed to synthesize the bulk Bi-2(Te0.9Se0.1)(3) thermoelectric materials and then the compacts were spread by hot-pressing process. The additives we selected several metal iodide and bromide(AgBr, CuBr, CuBr2, AgI). All dopants increase the carrier concentration and power-factor. The excellent metal element of dopants were silver and copper. Moreover, the effect of spreading on the crystal orientation and thermoelectric performance of the compacts was investigated. The microstructural characterizations of the spread compacts by XRD and SEM indicated a high crystallographic orientation after spreading. Furthermore, power-factor and carrier mobility was increased by the high crystal orientation.

引用

页码：31 / 33

页数：3

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