Electroless deposition of Cu-In-Ga-Se thin films

被引：6

作者：

Bhattacharya, RN ^{[1
]}

Batchelor, W ^{[1
]}

Noufi, RN ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 1999年 / 2卷 / 05期

关键词：

D O I：

10.1149/1.1390790

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Copper-indium-gallium-selenium thin films have been prepared by electroless deposition technique on an Mo/glass substrate. Electroless precursors are prepared by short-circuiting the Mo substrate to the Fe counter electrode. The films are characterized by inductively coupled plasma and X-ray analysis. The device fabricated using electroless precursor films resulted in a solar cell efficiency of 12.4%. (C) 1999 The Electrochemical Society. S1099-0062(98)12-082-5. All rights reserved.

引用

页码：222 / 223

页数：2

共 7 条

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Bhattacharya, RN ;

Batchelor, W ;

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Hasoon, F ;

Granata, JE ;

Ramanathan, K ;

Alleman, J ;

Keane, J ;

Mason, A ;

Matson, RJ ;

Noufi, RN .

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