14.1% CuIn1-xGaxSe2-based photovoltaic cells from electrodeposited precursors

被引：41

作者：

Bhattacharya, RN ^{[1
]}

Batchelor, W ^{[1
]}

Wiesner, H ^{[1
]}

Hasoon, F ^{[1
]}

Granata, JE ^{[1
]}

Ramanathan, K ^{[1
]}

Alleman, J ^{[1
]}

Keane, J ^{[1
]}

Mason, A ^{[1
]}

Matson, RJ ^{[1
]}

Noufi, RN ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1998年 / 145卷 / 10期

关键词：

D O I：

10.1149/1.1838823

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We have fabricated 14.1% efficient CuIn1-xGaxSe2 (CIGS) based devices from electrodeposited precursors. As deposited precursors are Cu-rich films and are polycrystalline in nature. Additional In, Ga, and Se were added to the precursor films by physical evaporation to adjust the final composition to CuIn1-xGaxSe2. Addition of In and Ga and also selenization at high temperature are very crucial for obtaining high-efficiency devices. The X-ray analysis of the as-deposited precursor film indicates the presence of CIGS and Cu2Se phases. The X-ray analysis of the film after adjusting the composition of the final film shows only the CIGS phase. The films/devices have been characterized by inductively coupled plasma spectrometry, Auger electron spectroscopy, X-ray diffraction, electron-probe microanalysis, current-voltage characteristics, capacitance-voltage, and spectral response.

引用

页码：3435 / 3440

页数：6

共 13 条

[1] SOLUTION GROWTH AND ELECTRODEPOSITED CULNSE2 THIN-FILMS [J].