Domain reversal and nonstoichiometry in lithium tantalate

被引：169

作者：

Kim, S ^{[1
]}

Gopalan, V

Kitamura, K

Furukawa, Y

机构：

[1] Penn State Univ, Mat Res Lab, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[3] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 305, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 06期

关键词：

D O I：

10.1063/1.1389525

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recent studies have shown that lithium nonstoichiometry has a tremendous influence on domain reversal characteristics in ferroelectric lithium tantalate. This work presents a systematic study of the domain reversal characteristics such as threshold coercive fields for domain reversal, domain stabilization times, "backswitching" phenomena, domain switching and wall pinning times, and sideways wall mobility in near-stoichiometric LiTaO3 with Li/(Li+Ta)similar to0.498. These properties are contrasted with those of congruent LiTaO3 [Li/(Li+Ta)similar to0.485]. A qualitative model is proposed based on nonstoichiometric dipolar defects to explain the dependence of threshold coercive field on defect density, and on repeated field cycling, the origin of domain backswitching, and domain stabilization times. (C) 2001 American Institute of Physics.

引用

页码：2949 / 2963

页数：15

共 33 条

[11] Mobility of 180° domain walls in congruent LiTaO3 measured using real-time electro-optic imaging microscopy [J].

Gopalan, V ;

Gerstl, SSA ;

Itagi, A ;

Mitchell, TE ;

Jia, QX ;

Schlesinger, TE ;

Stancil, DD .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) :1638-1646

[12]

GOPALAN V, 2000, HDB ADV ELECT PHOTON, V4, P57

[13]

IVANOV SA, 1978, KRISTALLOGRAFIYA+, V23, P1071

[14]

IVANOVA EM, 1998, KRISTALLOGRAFIYA, V43, P337

[15] COMPARATIVE-STUDY OF DEFECT STRUCTURES IN LITHIUM-NIOBATE WITH DIFFERENT COMPOSITIONS [J].

IYI, N ;

KITAMURA, K ;

IZUMI, F ;

YAMAMOTO, JK ;

HAYASHI, T ;

ASANO, H ;

KIMURA, S .

JOURNAL OF SOLID STATE CHEMISTRY, 1992, 101 (02) :340-352

[16] Direct x-ray synchrotron imaging of strains at 180° domain walls in congruent LiNbO3 and LiTaO3 crystals [J].

Kim, S ;

Gopalan, V ;

Steiner, B .

APPLIED PHYSICS LETTERS, 2000, 77 (13) :2051-2053

[17] Crystal growth and low coercive field 180° domain switching characteristics of stoichiometric LiTaO3 [J].

Kitamura, K ;

Furukawa, Y ;

Niwa, K ;

Gopalan, V ;

Mitchell, TE .

APPLIED PHYSICS LETTERS, 1998, 73 (21) :3073-3075

[18] FERROELECTRIC DOMAIN STABILIZATION IN BATIO3 BY BULK ORDERING OF DEFECTS [J].

LAMBECK, PV ;

JONKER, GH .

FERROELECTRICS, 1978, 22 (1-2) :729-731

[19]

Lerner P., 1968, Journal of Crystal Growth, V3-4Spe, P231, DOI 10.1016/0022-0248(68)90139-5

[20]

MILLER RC, 1997, PHYS REV, V117, P477

← 1 2 3 4 →