Characterization of hafnium oxide thin films by source gas pulse introduced metalorganic chemical vapor deposition, using amino-family Hf precursors

被引：17

作者：

Hino, S

Nakayama, M

Takahashi, K

Funakubo, H

Tokumitsu, E

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[3] Tohoku Univ, Res Inst Elect Commun, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 9B期

关键词：

hafnium oxide; high dielectric constant; chemical vapor deposition; impurity; MOSFET;

D O I：

10.1143/JJAP.42.6015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have characterized hafnium oxide thin films grown on SiO2/p-Si(001) by source gas pulse introduced metalorganic chemical vapor deposition (MOCVD) using tetrakis-diethylamido-hafnium (Hf[N(C2H5)(2)](4)) and tetrakis-dimethylamido-hafnium (Hf[N(CH3)(2)](4)). O-2 or H2O is used as oxidant gas. It is demonstrated that the use of H2O can reduce the residual impurity concentrations of hafnium oxide films when the deposition temperature is as low as 280degreesC. In addition, we have found that the residual impurity concentration of hafniurn oxide films grown with Hf[N(C2H5)(2)](4) is lower than that grown with Hf[N(CH3)(2)](4). This tendency agrees with the leakage current density. An equivalent SiO2 thickness (EOT) of 1.4nm with 4.7 x 10(-6) A/cm(2) @ -1 V have been obtained for the hafniurn oxide films grown with Hf[N(C2H5)(2)](4) at 280degreesC.

引用

页码：6015 / 6018

页数：4

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