Growth and characterization of aluminum oxide films by plasma-assisted atomic layer deposition

被引：16

作者：

Jeong, CW ^{[1
]}

Lee, BI ^{[1
]}

Joo, SK ^{[1
]}

机构：

[1] Seoul Natl Univ, Coll Engn, Sch MS&E, Kwanak Ku, Seoul 151742, South Korea

来源：

MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | 2001年 / 16卷 / 1-2期

关键词：

aluminum oxide; plasma-assisted atomic layer deposition; DMEAA;

D O I：

10.1016/S0928-4931(01)00299-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin aluminum oxide (Al2O3) films were grown by plasma-assisted atomic layer controlled deposition (PAALD) method using Dimethylethylamine alane ((CH3)(2) (C2H5)N:AlH3) (DMEAA). Al was deposited by PAALD method, then the Al films were oxidized into Al2O3 by the plasma oxidation in the same chamber without breaking the vacuum. Al2O3 thin films of 15 mn thickness were prepared by repetition of the above mentioned process. Thus, prepared Al2O3 thin films showed a refractive index of 1.68. The thickness and the refractive index fluctuation of the film over a 4-in. wafer were +/-2.3% and +/-1.9%, respectively, for atomic layer controlled deposited films. The leakage current density and breakdown field were measured to be about 10(-8) A/cm(2) at 1 and 7 MV/cm, respectively. (C) 2001 Published by Elsevier Science B.V.

引用

页码：59 / 64

页数：6

共 28 条

[1]

ABBOTT RA, 1971, SOLID STATE ELECT, V13, P565

[2] ALUMINUM THIN-FILM GROWTH BY THE THERMAL-DECOMPOSITION OF TRIETHYLAMINE ALANE [J].

DUBOIS, LH ;

ZEGARSKI, BR ;

GROSS, ME ;

NUZZO, RG .

SURFACE SCIENCE, 1991, 244 (1-2) :89-95

[3]

Fredriksson E., 1993, Journal of Chemical Vapor Deposition, V1, P333

[4]

Fromhold A.T., 1976, THEORY METAL OXIDATI

[5] SEQUENTIAL SURFACE CHEMICAL-REACTION LIMITED GROWTH OF HIGH-QUALITY AL2O3 DIELECTRICS [J].

HIGASHI, GS ;

FLEMING, CG .

APPLIED PHYSICS LETTERS, 1989, 55 (19) :1963-1965

[6] EPITAXIAL AL2O3 FILMS ON SI BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].

ISHIDA, M ;

KATAKABE, I ;

NAKAMURA, T ;

OHTAKE, N .

APPLIED PHYSICS LETTERS, 1988, 52 (16) :1326-1328

[7]

KANG CJ, 1990, THIN SOLID FILMS, V189, P161

[8] DEPOSITION OF ALN AT LOWER TEMPERATURES BY ATMOSPHERIC METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING DIMETHYLETHYLAMINE ALANE AND AMMONIA [J].

KIDDER, JN ;

KUO, JS ;

LUDVIKSSON, A ;

PEARSALL, TP ;

ROGERS, JW ;

GRANT, JM ;

ALLEN, LR ;

HSU, ST .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03) :711-715

[9] Microstructure and deposition rate of aluminum thin films from chemical vapor deposition with dimethylethylamine alane [J].

Kim, BY ;

Li, XD ;

Rhee, SW .

APPLIED PHYSICS LETTERS, 1996, 68 (25) :3567-3569

[10] A new technique for via plugging through the selective chemical vapor deposition of aluminum [J].

Kim, BY ;

Kim, DC ;

Joo, SK .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (02) :657-660

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