Microstructure and deposition rate of aluminum thin films from chemical vapor deposition with dimethylethylamine alane

被引:23
作者
Kim, BY [1 ]
Li, XD [1 ]
Rhee, SW [1 ]
机构
[1] POHANG UNIV SCI & TECHNOL,DEPT CHEM ENGN,LAB ADV MAT PROC,POHANG 790784,SOUTH KOREA
关键词
D O I
10.1063/1.116639
中图分类号
O59 [应用物理学];
学科分类号
摘要
Deposition of aluminum film from DMEAA in the temperature range of 100-300 degrees C has been studied. In this temperature range, there is a maximum deposition rate at around 150 degrees C. The film deposited at 190 degrees C has elongated blocklike grain shapes, which are similar to 600 nm in width and 930 nm in length. Grains in the film deposited at 150 degrees C showed an equiaxed structure with grain size in the range of 100-300 nm in a film with 600 nm thickness, Aluminum oxide particle inclusion was observed especially at high deposition temperature. Plausible reaction pathways of DMEAA dissociation were suggested to explain the experimental observations. (C) 1996 American Institute of Physics.
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页码:3567 / 3569
页数:3
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