PYROLYTIC LASER-ASSISTED CHEMICAL-VAPOR-DEPOSITION OF AL FROM DIMETHYLETHYLAMINE-ALANE - CHARACTERIZATION AND A NEW 2-STEP WRITING PROCESS

被引：23

作者：

HAN, JS ^{[1
]}

JENSEN, KF ^{[1
]}

SENZAKI, Y ^{[1
]}

GLADFELTER, WL ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT CHEM,MINNEAPOLIS,MN 55455

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.111119

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe pyrolytic laser assisted chemical vapor deposition of AI from dimethylethylamine-alane with 514-nm radiation from an Ar ion laser. High purity Al lines with resistivity dose to bulk Al are reported for a range of operating conditions. The relationship between operating parameters and materials properties of the deposited lines is delineated. Results from deposition on different substrates, Pt, Au, W, and Si, provide insight into thermal and nucleation effects in the laser writing process. Based on the observed nucleation behavior, we demonstrate a two-step fast writing process involving fast laser nucleation of lines, followed by selective chemical vapor deposition of Al on the nucleated pattern.

引用

页码：425 / 427

页数：3

共 21 条

[1]

BAUM TH, 1990, HIGH TEMP SCI, V27, P237

[2] CHEMICAL VAPOR-DEPOSITION OF ALUMINUM FROM TRIMETHYLAMINE-ALANE [J].