Growth and characterization of aluminum oxide films by plasma-assisted atomic layer deposition

被引：16

作者：

Jeong, CW ^{[1
]}

Lee, BI ^{[1
]}

Joo, SK ^{[1
]}

机构：

[1] Seoul Natl Univ, Coll Engn, Sch MS&E, Kwanak Ku, Seoul 151742, South Korea

来源：

MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | 2001年 / 16卷 / 1-2期

关键词：

aluminum oxide; plasma-assisted atomic layer deposition; DMEAA;

D O I：

10.1016/S0928-4931(01)00299-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin aluminum oxide (Al2O3) films were grown by plasma-assisted atomic layer controlled deposition (PAALD) method using Dimethylethylamine alane ((CH3)(2) (C2H5)N:AlH3) (DMEAA). Al was deposited by PAALD method, then the Al films were oxidized into Al2O3 by the plasma oxidation in the same chamber without breaking the vacuum. Al2O3 thin films of 15 mn thickness were prepared by repetition of the above mentioned process. Thus, prepared Al2O3 thin films showed a refractive index of 1.68. The thickness and the refractive index fluctuation of the film over a 4-in. wafer were +/-2.3% and +/-1.9%, respectively, for atomic layer controlled deposited films. The leakage current density and breakdown field were measured to be about 10(-8) A/cm(2) at 1 and 7 MV/cm, respectively. (C) 2001 Published by Elsevier Science B.V.

引用

页码：59 / 64

页数：6

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