METALORGANIC MOLECULAR-BEAM EPITAXY OF GAMMA-AL2O3 FILMS ON SI AT LOW GROWTH TEMPERATURES

被引：70

作者：

SAWADA, K ^{[1
]}

ISHIDA, M ^{[1
]}

NAKAMURA, T ^{[1
]}

OHTAKE, N ^{[1
]}

机构：

[1] TOYOKO KAGAKU CO LTD,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 20期

关键词：

D O I：

10.1063/1.99709

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1672 / 1674

页数：3

共 11 条

[1] STRAIN-MEASUREMENT OF EPITAXIAL CAF2 ON SI(111) BY MEV ION CHANNELING [J].

HASHIMOTO, S ;

PENG, JL ;

GIBSON, WM ;

SCHOWALTER, LJ ;

FATHAUER, RW .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1071-1073

[2] VAPOR-PHASE EPITAXIAL-GROWTH OF MGO . AL2O3 [J].

IHARA, M ;

ARIMOTO, Y ;

JIFUKU, M ;

KIMURA, T ;

KODAMA, S ;

YAMAWAKI, H ;

YAMAOKA, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) :2569-2573

[3] EPITAXIAL AL2O3 FILMS ON SI BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION [J].

ISHIDA, M ;

KATAKABE, I ;

NAKAMURA, T ;

OHTAKE, N .

APPLIED PHYSICS LETTERS, 1988, 52 (16) :1326-1328

[4] SILICON INSULATOR HETERO-EPITAXIAL STRUCTURES FORMED BY VACUUM DEPOSITION OF CAF2 AND SI [J].

ISHIWARA, H ;

ASANO, T .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :66-68

[5] HETEROEPITAXIAL GROWTH OF SRO FILMS ON SI SUBSTRATES [J].

KADO, Y ;

ARITA, Y .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) :2398-2400

[6]

KARISSON UO, 1986, J VAC SCI TECHNOL B, V4, P1117

[7] INITIAL FORMATION OF THE INTERFACE BETWEEN A POLAR INSULATOR AND A NONPOLAR SEMICONDUCTOR - CAF2 ON SI(111) [J].

OLMSTEAD, MA ;

UHRBERG, RIG ;

BRINGANS, RD ;

BACHRACH, RZ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1123-1127

[8] GROWTH OF AN EPITAXIAL INSULATOR-METAL-SEMICONDUCTOR STRUCTURE ON SI BY MOLECULAR-BEAM EPITAXY [J].

PHILLIPS, JM ;

AUGUSTYNIAK, WM .

APPLIED PHYSICS LETTERS, 1986, 48 (07) :463-465

[9] MOLECULAR-BEAM EPITAXY OF SI ON A CAF2/SI (100) STRUCTURE [J].

SASAKI, M ;

ONODA, H .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) :3104-3109

[10] EPITAXIAL-GROWTH AND CHARACTERIZATION OF CAF2 ON SI [J].

SCHOWALTER, LJ ;

FATHAUER, RW ;

GOEHNER, RP ;

TURNER, LG ;

DEBLOIS, RW ;

HASHIMOTO, S ;

PENG, JL ;

GIBSON, WM ;

KRUSIUS, JP .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :302-308

← 1 2 →