EPITAXIAL AL2O3 FILMS ON SI BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION

被引：132

作者：

ISHIDA, M ^{[1
]}

KATAKABE, I ^{[1
]}

NAKAMURA, T ^{[1
]}

OHTAKE, N ^{[1
]}

机构：

[1] TOYOKO KAGAKU CO LTD,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 16期

关键词：

D O I：

10.1063/1.99685

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1326 / 1328

页数：3

共 22 条

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APPLIED PHYSICS LETTERS, 1983, 43 (09) :828-830

[6] STRAIN-MEASUREMENT OF EPITAXIAL CAF2 ON SI(111) BY MEV ION CHANNELING [J].

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PENG, JL ;

GIBSON, WM ;

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FATHAUER, RW .

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[7] STRUCTURE AND BONDING AT THE CAF2/SI (111) INTERFACE [J].

HIMPSEL, FJ ;

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HUGHES, G ;

JORDAN, JL ;

KARLSSON, UO ;

MCFEELY, FR ;

MORAR, JF ;

RIEGER, D .

APPLIED PHYSICS LETTERS, 1986, 48 (09) :596-598

[8]

HOFFMAN RA, 1985, APPL PHYS LETT, V47

[9] VAPOR-PHASE EPITAXIAL-GROWTH OF MGO . AL2O3 [J].

IHARA, M ;

ARIMOTO, Y ;

JIFUKU, M ;

KIMURA, T ;

KODAMA, S ;

YAMAWAKI, H ;

YAMAOKA, T .

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[10] GROWTH AND PROPERTIES OF SI FILMS ON SAPPHIRE WITH PREDEPOSITED AMORPHOUS SI LAYERS [J].

ISHIDA, M ;

YASUDA, Y ;

OHYAMA, H ;

WAKAMATSU, H ;

ABE, H ;

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JOURNAL OF APPLIED PHYSICS, 1986, 59 (12) :4073-4078

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