GROWTH AND PROPERTIES OF SI FILMS ON SAPPHIRE WITH PREDEPOSITED AMORPHOUS SI LAYERS

被引：12

作者：

ISHIDA, M

YASUDA, Y

OHYAMA, H

WAKAMATSU, H

ABE, H

NAKAMURA, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 12期

关键词：

D O I：

10.1063/1.336714

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：4073 / 4078

页数：6

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[1] EPITAXIAL-GROWTH OF SI FILMS ON CAF2/SI STRUCTURES WITH THIN SI LAYERS PREDEPOSITED AT ROOM-TEMPERATURE
ASANO, T
ISHIWARA, H
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3566 - 3570
[2] EFFECT OF RAPID EARLY GROWTH ON PHYSICAL AND ELECTRICAL PROPERTIES OF HETEROEPITAXIAL SILICON
CULLEN, GW
CORBOY, JF
SMITH, RT
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 274 - 283
[3] HIGH ELECTRON-MOBILITY SILICON FILMS GROWN ON SAPPHIRE AT HIGH GROWTH-RATE
IMAMURA, Y
DAIDO, K
MIMEGISHI, K
NAKANISHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 547 - 550
[4] EPITAXIAL-GROWTH OF SOS FILMS WITH AMORPHOUS SI BUFFER LAYER
ISHIDA, M
OHYAMA, H
SASAKI, S
YASUDA, Y
NISHINAGA, T
NAKAMURA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) : L541 - L544
[5] CHARACTERIZATION OF SOS FILMS GROWN WITH AMORPHOUS SI BUFFER LAYERS BY MOS FETS
ISHIDA, M
YASUDA, Y
WAKAMATSU, H
ABE, H
NISHINAGA, T
NAKAMURA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07): : L438 - L440
[6] KOIDE Y, COMMUNICATION
[7] GROWTH OF SINGLE DOMAIN GAAS ON 2-INCH SI(100) SUBSTRATE BY MOLECULAR-BEAM EPITAXY
NISHI, S
INOMATA, H
AKIYAMA, M
KAMINISHI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (06): : L391 - L393
[8] CHEMICAL VAPOR-DEPOSITION OF SINGLE CRYSTALLINE BETA-SIC FILMS ON SILICON SUBSTRATE WITH SPUTTERED SIC INTERMEDIATE LAYER
NISHINO, S
HAZUKI, Y
MATSUNAMI, H
TANAKA, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) : 2674 - 2680
[9] CHEMICAL VAPOR-DEPOSITION OF SINGLE-CRYSTALLINE ZNO FILM WITH SMOOTH SURFACE ON INTERMEDIATELY SPUTTERED ZNO THIN-FILM ON SAPPHIRE
OHNISHI, S
HIROKAWA, Y
SHIOSAKI, T
KAWABATA, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (05) : 773 - 778
[10] FAULT-FREE SILICON AT THE SILICON-SAPPHIRE INTERFACE
PONCE, FA
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 371 - 373