EFFECT OF RAPID EARLY GROWTH ON PHYSICAL AND ELECTRICAL PROPERTIES OF HETEROEPITAXIAL SILICON

被引：26

作者：

CULLEN, GW ^{[1
]}

CORBOY, JF ^{[1
]}

SMITH, RT ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

JOURNAL OF CRYSTAL GROWTH | 1975年 / 31卷 / DEC期

关键词：

D O I：

10.1016/0022-0248(75)90141-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：274 / 283

页数：10

共 19 条

[1] LEED STUDIES OF (0001) FACE OF ALPHA-ALUMINA
CHANG, CC
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (12) : 5570 - &
[2] COMPARISON OF SEMICONDUCTING PROPERTIES OF THIN-FILMS OF SILICON ON SAPPHIRE AND SPINEL
CULLEN, GW
CORBOY, JF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (10) : 1345 - 1350
[3] PREPARATION AND PROPERTIES OF CHEMICALLY VAPOR DEPOSITED SILICON ON SAPPHIRE AND SPINEL
CULLEN, GW
[J]. JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) : 107 - +
[4] SILICON ON SPINEL - INTERACTION BETWEEN DEPOSITION CONSTITUENTS AND SUBSTRATE SURFACE
CULLEN, GW
DOUGHERTY, FC
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 230 - +
[5] COMPARISON OF HOLE MOBILITY AND EARLY GROWTH OF EPITAXIAL SILICON ON FLAME FUSION, FLUX, AND CZOCHRALSKI SPINEL
CULLEN, GW
WANG, CC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) : 640 - &
[6] MEASUREMENT OF FILM THICKNESS USING INFRARED INTERFERENCE
DUMIN, DJ
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1967, 38 (08) : 1107 - &
[7] A STAGNANT LAYER MODEL FOR EPITAXIAL GROWTH OF SILICON FROM SILANE IN A HORIZONTAL REACTOR
EVERSTEYN, FC
SEVERIN, PJW
BREKEL, CHJV
PEEK, HL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) : 925 - +
[8] GARCIA M, 1973, 3RD EUR SOL STAT DEV, P828
[9] DEVELOPMENT OF A DUAL RATE TECHNIQUE FOR GROWTH OF SILICON-ON-SAPPHIRE FILMS
GOTTLIEB, GE
CORBOY, JF
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 261 - &
[10] EPITAXIAL-GROWTH AND PROPERTIES OF P-TYPE SILICON ON SPINEL USING A DUAL-RATE DEPOSITION TECHNIQUE
GOTTLIEB, GE
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 12 (04) : 327 - &

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