MEASUREMENT OF FILM THICKNESS USING INFRARED INTERFERENCE

被引：44

作者：

DUMIN, DJ

机构：

来源：

关键词：

D O I：

10.1063/1.1720978

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：1107 / &

共 12 条

CORL, EA ;

WIMPFHEIMER, H .

[2] METHOD FOR MEASURING THICKNESS OF EPITAXIAL SILICON FILMS [J].

DASH, WC .

[3] IMPURITY DISTRIBUTION IN EPITAXIAL GROWTH [J].

GROVE, AS ;

RODER, A ;

SAH, CT .

[4]

HOLLAND L, 1965, THIN FILM MICROEL ED

[5]

LUKES F, 1960, CZECH J PHYS B, V10, P317

[6]

MANSOUR TM, 1963, MATERIALS RES STANDA, V3, P29

[7]

MEULLER CW, 1964, P IEEE, V53, P1487

[8]

Runyan W.R., 1965, SILICON SEMICONDUCTO

SPITZER, WG ;

TANENBAUM, M .

[10]

TOLANSKY S, 1948, MULTIPLEBEAM INTERFE