EPITAXIAL-GROWTH OF SOS FILMS WITH AMORPHOUS SI BUFFER LAYER

被引：20

作者：

ISHIDA, M

OHYAMA, H

SASAKI, S

YASUDA, Y

NISHINAGA, T

NAKAMURA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 07期

关键词：

D O I：

10.1143/JJAP.20.L541

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L541 / L544

页数：4

共 8 条

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[7]

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[8] EPITAXIAL GROWTH OF SILICON FILMS EVAPORATED ON SAPPHIRE [J].

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