INTERFACE PROPERTIES OF SI ON SAPPHIRE AND SPINEL

[1] ABRAHAMS MS, COMMUNICATION

[2] RESIDUAL STRESS IN EPITAXIAL SILICON FILM ON SAPPHIRE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 994 - +

[3] EPITAXY OF SILICON ON ALUMINA-STRUCTURAL EFFECTS [J]. PHILOSOPHICAL MAGAZINE, 1966, 14 (127): : 31 - &

[4] BICKNELL RW, 1964, PHILOS MAG, V8, P965

[5] COMPARISON OF SEMICONDUCTING PROPERTIES OF THIN-FILMS OF SILICON ON SAPPHIRE AND SPINEL [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (10) : 1345 - 1350

[6] CULLEN GW, 1975, 3RD INT C VAP GROWTH

[7] GROWTH OF ALUMINUM OXIDE WHISKERS BY VAPOR DEPOSITION [J]. JOURNAL OF CHEMICAL PHYSICS, 1959, 31 (05) : 1256 - 1257

[8] DRUMINSKI M, 1974, ELECTROCHEMICAL SOC

[9] CARRIER TRANSPORT IN THIN SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) : 2759 - &

[10] DEFORMATION OF AND STRESS IN EPITAXIAL SILICON FILMS ON SINGLE-CRYSTAL SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2700 - &

[1] ABRAHAMS MS, COMMUNICATION

[2] RESIDUAL STRESS IN EPITAXIAL SILICON FILM ON SAPPHIRE [J]. SOLID-STATE ELECTRONICS, 1965, 8 (12) : 994 - +

[3] EPITAXY OF SILICON ON ALUMINA-STRUCTURAL EFFECTS [J]. PHILOSOPHICAL MAGAZINE, 1966, 14 (127): : 31 - &

[4] BICKNELL RW, 1964, PHILOS MAG, V8, P965

[5] COMPARISON OF SEMICONDUCTING PROPERTIES OF THIN-FILMS OF SILICON ON SAPPHIRE AND SPINEL [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (10) : 1345 - 1350

[6] CULLEN GW, 1975, 3RD INT C VAP GROWTH

[7] GROWTH OF ALUMINUM OXIDE WHISKERS BY VAPOR DEPOSITION [J]. JOURNAL OF CHEMICAL PHYSICS, 1959, 31 (05) : 1256 - 1257

[8] DRUMINSKI M, 1974, ELECTROCHEMICAL SOC

[9] CARRIER TRANSPORT IN THIN SILICON FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) : 2759 - &

[10] DEFORMATION OF AND STRESS IN EPITAXIAL SILICON FILMS ON SINGLE-CRYSTAL SAPPHIRE [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2700 - &