CHARACTERIZATION OF SOS FILMS GROWN WITH AMORPHOUS SI BUFFER LAYERS BY MOS FETS

被引：11

作者：

ISHIDA, M

YASUDA, Y

WAKAMATSU, H

ABE, H

NISHINAGA, T

NAKAMURA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 07期

关键词：

D O I：

10.1143/JJAP.22.L438

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L438 / L440

页数：3

共 7 条

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[2]

HSU ST, 1975, RCA REV, V36, P240

[3] EPITAXIAL-GROWTH OF SOS FILMS WITH AMORPHOUS SI BUFFER LAYER [J].

ISHIDA, M ;

OHYAMA, H ;

SASAKI, S ;

YASUDA, Y ;

NISHINAGA, T ;

NAKAMURA, T .

[4] INTERFACE PROPERTIES OF SI ON SAPPHIRE AND SPINEL [J].

SCHLOTTERER, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :29-36

[5]

SZE SM, 1981, PHYS SEMICONDUCTOR D, P431

[6] EPITAXIAL GROWTH OF SILICON FILMS EVAPORATED ON SAPPHIRE [J].

YASUDA, Y ;

OHMURA, Y .

[7]

YOSHII T, 1980, J JPN ASS CRYSTAL GR, V7, P22