Temperature dependent transport properties in GaN, A1xGa1-xN, and InxGa1-xN semiconductors

被引：74

作者：

Anwar, AFM ^{[1
]}

Wu, SL

Webster, RT

机构：

[1] Univ Connecticut, Dept Elect & Comp Engn, Storrs, CT 06269 USA

[2] USAF, Div Electromagnet Technol, Sensors Directorate, Res Lab, Hanscom AFB, MA 01730 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 03期

关键词：

AlGaN; electron transport; InGaN;

D O I：

10.1109/16.906452

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ensemble Monte Carlo simulation is used to determine the electron saturation velocity and low-field mobility for AlxGa1-xN and InxGa1-xN. Acoustic phonon, optical phonon, intervalley, ionized impurity, alloy, and piezoelectric scattering are included in the simulation. Doping concentration ranging from 10(17) cm(-3) to 10(19) cm(-3) is considered in the temperature range of 50 K to 500 K, Theoretical calculation shows excellent agreement with low-field mobility experimental data. Empirical expressions for low field mobility and saturation velocity are provided as functions of temperature, doping concentration and mole fraction.

引用

页码：567 / 572

页数：6

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