Dependence of the photoluminescence of Tl2InGaS4 layered crystal on temperature and excitation intensity

被引：14

作者：

Gasanly, NM ^{[1
]}

Serpenguzel, A

Gurlu, O

Aydinli, A

Yilmaz, I

机构：

[1] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey

[2] Bilkent Univ, Dept Phys, TR-06533 Ankara, Turkey

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 108卷 / 08期

关键词：

semiconductors; optical properties; luminescence;

D O I：

10.1016/S0038-1098(98)00396-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The emission band spectra of Tl2InGaS4 layered crystals were investigated in the 10-120 K temperature range and in the 540-860 nm wavelength range using photoluminescence (PL). The peak energy position of the emission band is located at 1.754 eV (707 nm) at 10 K. The emission band has a half-width of 0.28 eV and an asymmetric Gaussian lineshape. The increase of the half-width of the emission band, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature is explained using the configuration coordinate model. The blue shift of the emission band peak energy and the sublinear increase of the emission band intensity with increasing excitation intensity is explained using the inhomogenously spaced donor-acceptor pair recombination model. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：525 / 530

页数：6

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