Nonspecular x-ray reflectivity study of roughness scaling in Si/Mo multilayers

被引:32
作者
Freitag, JM [1 ]
Clemens, BM [1 ]
机构
[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
关键词
D O I
10.1063/1.1332095
中图分类号
O59 [应用物理学];
学科分类号
摘要
The interfacial roughness and lateral correlation length of a series of Si/Mo multilayers with bilayer period 69 Angstrom and number of bilayers ranging from 5 to 40 have been characterized by diffuse x-ray scattering. Superlattice peaks are preserved in offset radial scans indicating a high degree of conformality in the roughness. The lateral correlation length xi increases with total film thickness h as xi similar toh(0.55); however, the magnitude of the roughness is approximately 2 A for all film thicknesses, in disagreement with scaling laws for self-affine growing surfaces. This observation suggests that interfaces retard the evolution of high-frequency roughness while replicating longer wavelength roughness from one layer to the next (C) 2001 American Institute of Physics.
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页码:1101 / 1107
页数:7
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