Resonant inversion of the circular photogalvanic effect in n-doped quantum wells -: art. no. 035319

被引:54
作者
Ganichev, SD [1 ]
Bel'kov, VV
Schneider, P
Ivchenko, EL
Tarasenko, SA
Wegscheider, W
Weiss, D
Schuh, D
Beregulin, EV
Prettl, W
机构
[1] Univ Regensburg, Fak Phys, D-93040 Regensburg, Germany
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany
关键词
D O I
10.1103/PhysRevB.68.035319
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We show that the sign of the circular photogalvanic effect can be changed by tuning the radiation frequency of circularly polarized light. Here resonant inversion of the photogalvanic effect has been observed for direct intersubband transition in n-type GaAs quantum well structures. This inversion of the photon helicity driven current is a direct consequence of the lifting of the spin degeneracy due to k-linear terms in the Hamiltonian in combination with energy and momentum conservation and optical selection rules.
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页数:6
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