Photogalvanic effects in quantum wells

被引：76

作者：

Ganichev, SD ^{[1
]}

Ivchenko, EL

Prettl, W

机构：

[1] Univ Regensburg, Inst Exp & Angew, D-93040 Regensburg, Germany

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 14卷 / 1-2期

关键词：

photogalvanic effect; spin orientation; quantum wells;

D O I：

10.1016/S1386-9477(02)00371-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Circular and linear photogalvanic effects induced by far-infrared radiation have been investigated in both n-type and p-type quantum wells (QWs) of various point symmetry groups. The circular photogalvanic effect arises due to optical spin orientation of free carriers in QWs which results in a directed motion of free carriers in the plane of a QW perpendicular to the direction of light propagation. Due to selection rules the direction of the current is determined by the helicity of the light and can be reversed by switching the helicity from right to left. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：166 / 171

页数：6

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